发明名称 TUNNEL MAGNETORESISTANCE EFFECT TYPE THIN FILM MAGNETIC HEAD AND MANUFACTURE OF THE HEAD
摘要 PROBLEM TO BE SOLVED: To provide a TMR type thin film magnetic head having a low resistance and a high MR ratio, and its manufacturing method. SOLUTION: In the case of laminating and forming the lower part gap layer of a non-magnetic conductor on a lower part shield layer (S1), laminating and forming a TMR element provided with two ferromagnetic thin film layers laminated holding a tunnel barrier layer there between on the lower part gap layer (S2), laminating and forming the upper part gap layer of the non-magnetic conductor on the TMR element and laminating and forming an upper part shield layer on the upper part gap layer (S5), at least the film-formation of the lower part shield layer and the film-formation of the TMR element are successively performed within the same process.
申请公布号 JP2001084523(A) 申请公布日期 2001.03.30
申请号 JP19990257159 申请日期 1999.09.10
申请人 TDK CORP 发明人 SHIMAZAWA KOJI;ARAKI SATORU
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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