| 摘要 |
PROBLEM TO BE SOLVED: To form an oxynitride film which can be controlled satisfactorily in film thickness, nitrogen content, interface roughness, and nitrogen position. SOLUTION: An oxynitride film 30 is formed through the reaction at the surface of a silicon substrate with active oxygen species and active nitrogen species. The reaction at the surface of the silicon substrate with the active oxygen and nitrogen species is caused by simultaneously emitting the active oxygen and nitrogen species upon the surface of the substrate. In addition, a reaction is caused between the formed oxynitride film formed in the above- mentioned way and the active nitrogen species by emitting the active nitrogen species upon the surface of the oxynitride film. Alternatively, the reaction at the surface of the silicon substrate with active oxygen and nitrogen species is caused by simultaneously emitting the active oxygen and nitrogen species upon the surface of the silicon substrate, after only the active oxygen or nitrogen species is emitted upon the surface of the substrate.
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