| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for insulating a copper layer in a metal-oxide- metal capacitor without deteriorating a device. SOLUTION: The inventive method comprises a step for forming a first electrode 110 on a semiconductor wafer, a step for forming a layer 120 of tantalum pentoxide on the first electrode 110, a step for forming a first barrier layer 130 on the layer 120 of tantalum pentoxide, and a step for forming a second electrode 140 containing copper on the first barrier layer 130. According to the arrangement, direct contact between copper and tantalum pentoxide is prevented. |
