| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for designing a mask dimension at the formation of metallic wiring by etching for making the width of the metallic wiring smaller than that of an ohmic electrode, and making it larger than that of a contact hole. SOLUTION: At the formation of an Al wiring 20 by etching using a mask 24, if the width of the mask 24 is defined as W, W is selected so that the inequalities L+2(S+dS)+a>W>C+2(S+dS)+2a (L is the width of an Au electrode 14, C is the width of a contact hole 18, S is the width of the etching quality of the side face of the Al wiring, dS is the fluctuation of the etching quantity, and (a) is the deviation of the alignment of the mask) is satisfied. |
