| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate and a method and device for measuring low-temperature thereof where, when a specified process or test is performed with a silicon substrate at a low-temperature, an arbitrary part or region of the silicon substrate is used to easily measure the temperature of the silicon substrate. SOLUTION: A P-N junction 3 of a silicon substrate 1 has a constant temperature characteristics. A stable linear relationship exists between a temperature and forward voltage at 40-250 K and the P-N junction 3 can be used as a temperature sensor. So, P-N junction 3 is formed in the specified region of the silicon substrate 1, and the P-N junction 3 is applied with a forward current at 40-250 K for measuring the forward voltage. |
