| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a copper interconnection. SOLUTION: This method is used for forming a single or dual-damascene interconnection. By adding an aluminum barrier layer 60 to an ordinary barrier layer, a barrier layer effective to preventing diffusion of copper can be created. First, a substrate layer is prepared, and then a dielectric layer is deposited on the substrate layer. The dielectric layer is patterned to form an interconnection trench. As an option, a titanium connection layer can be deposited. Then, an aluminum barrier layer 60 is deposited on the inner surface of the interconnection trench. And, a second barrier layer made of, for example, titanium or titanium nitride is deposited on the aluminum barrier layer. Thereafter, a copper layer is deposited on the second barrier layer, filling the interconnection trench. The copper layer, the second barrier layer, and the aluminum barrier layer are polished to the upper face of the dielectric layer to form a copper interconnection and complete an IC device. |
