| 摘要 |
PROBLEM TO BE SOLVED: To make a very accurate pattern by compensating for the shrinkage of a pattern of a resist film in an excimer beam lithography, where an organic antireflection film is formed under the resist film. SOLUTION: A polysilicon film 4, an oxide film 5, and an organic antireflection film 6 are formed, and then a resist film 7 of a specified line width is formed on the antireflection film 6 (a). The antireflection film is patterned by dry etching (b) (a broken line showing the proper patterning position). Then, the oxide film 5 is etched. At this time, etching conditions are regulated so as to form a tapered section at the end part of the pattern of the oxide film (c). The polysilicon film 4 is patterned with the oxide film 5 as a mask (d). Thereafter, the resist film 7, the antireflection film 6, and the oxide film 5 are removed.
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