| 摘要 |
PROBLEM TO BE SOLVED: To switch a selected memory cell by a method wherein currents which are supplied to a first trace and a second trace which cross the selected memory cell generate a second magnetic field and a third magnetic field which are at right angles and a first magnetic field and the second and third magnetic fields are composed. SOLUTION: When a memory cell 12 is selected, a current Ix and a current I are supplied to a word line 14 and a bit line 16 which cross the memory cell. When the current Ix is supplied to the word line 14, a magnetic field Hy is generated around the word line 14. When the current Iy is supplied to the bit line 16, a magnetic field Hx is formed around the bit line 16. When the currents Ix, Iy are applied to the word line 14, a magnetic field which is generated as its result is turned along one out of two routes and a switching operation is generated. A magnetic field bias Hb turns the magnetic field along a single route always in the same quadrant. As a result, the reproducibility of the switching operation is increased.
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