发明名称 BPSG PLANARIZING METHOD WITH IMPROVED PLANARITY WITHOUT ANY CHATTER MARK DEFECTS
摘要 PROBLEM TO BE SOLVED: To improve flatness of a BPSG layer by forming a second BPSG layer on a first BPSG layer, and reflowing the second BPSG layer in a thermal processing. SOLUTION: A first BPSG(borophosphosilicate glas) layer 101 comprises 3-5% of boron dopant level and 4-5% of phosphorus dopant level and is deposited on a lower layer structure for about 30 minutes. On the first BPSG layer 101, a second BPSG layer 201 is formed using LPCVD with tetraethylorthosilicate as a reactive gas. The second BPSG layer 201 comprises 4-7% of boron dopant level and 1-4% of phosphorus dopant level and is reflowed in a thermal process. Thus, the second BPSG layer 201 is planarized.
申请公布号 JP2001085431(A) 申请公布日期 2001.03.30
申请号 JP19990247452 申请日期 1999.09.01
申请人 PROMOS TECHNOLOGIES INC;MOSEL VITELIC INC;SIEMENS AG 发明人 DEN EINEN
分类号 H01L21/3205;H01L21/306;H01L21/316;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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