| 摘要 |
PROBLEM TO BE SOLVED: To lower the resistance of a gate electrode and to suppress the abnor mal oxidation of the gate electrode. SOLUTION: An amorphous silicon film 12 is formed on a gate oxide film 11. After that, a polysilicon film 13 is formed on the amorphous silicon film 12 continuously inside the same chamber. After that, a tungsten silicon film 14 is formed on the polysilicon film 13. In this manner, in a gate electrode 17, the polysilicon film 13 which can increase the crystal-plane strength ratio of the tungsten silicon film 14 if formed under the tungsten silicon film 14.
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