| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate-treating device which can quickly perform treatment for obtaining desired characteristics, while the device suppresses the contamination by particles to the utmost. SOLUTION: When a wafer W is delivered from a main wafer transfer mechanism 22 into a heat treatment chamber 51, the air pressure in the chamber 51 is made higher than the air pressure on the transfer mechanism 22 side by blowing nitrogen gas into the chamber 51. Thereafter, a hermetically sealed space for heat treatment is formed in the chamber 51, and heat treatment is performed on the wafer W, by stopping the blown-out nitrogen gas and setting the inside of the chamber 51 at an air pressure which is lower than the atmospheric pressure by starting a vacuum pump 70. |
