MASK FOR CHARGED PARTICLE BEAM EXPOSURE, CHARGED PARTICLE BEAM EXPOSURE SYSTEM AND CHARGED PARTICLE BEAM EXPOSURE METHOD

摘要

PROBLEM TO BE SOLVED: To enable a highly accurate registration. SOLUTION: A transfer mask 16 is irradiated with an electron beam 12 and a positioning mark 19b is scanned with the electron beam 12 passing through an opening 43b for alignment, reflected electron and secondary electrons 61 from the wafer 19 are passed through the opening 43c for mark detection and are detected by a detector 15 which is placed on the surface that is not opposed to the test sample of the transfer mask 16, and the detection operation is performed by moving the wafer 19 or the transfer mask. In this way, relative displacement between the wafer 19 and the transfer mask 16 is detected, the relative displacement is corrected, and pattern exposure is performed by using a pattern part 43a.