| 摘要 |
PROBLEM TO BE SOLVED: To obtain an etching method, by which the ending point of etching can be detected with high accuracy at the time of etching a nitrogen-containing metallic film having a high melting point, using a carbon-free fluorine compound gas. SOLUTION: An etching method includes a process, in which a nitrogen atom-containing layer is etched in a first area by using a carbon-free etching gas, and the gas produced in the first area is introduced to a second area, where a carbon nitride is generated by generating plasma from the gas generated in the first area and a carbon-containing gas introduced to the second area. Then the luminous intensity of the carbon nitride is measured in the second area, and the time at which the luminous intensity decreases to a prescribed value is decided as the ending point of the etching on the nitrogen atom- containing layer.
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