| 摘要 |
PROBLEM TO BE SOLVED: To increase an operation speed by reducing gate length without decreasing driving capability. SOLUTION: The semiconductor device is equipped with a silicon substrate 1, an element separation insulating film 9, a channel region 2, a source/drain region 3, a silicon oxide film 4 that is formed on the upper surface of the silicon substrate 1 being placed at the upper part of the source/drain region 3 and forms a pair, and gate structure 8 that is formed in a first recessed part being formed by the upper surface of the silicon substrate 1 being placed at the upper part of the channel region 2 and the side surface of the silicon oxide film 4. The gate structure 8 has a gate oxide film 5 that is formed on the upper surface of the silicon substrate 1, a silicon oxide film 6 that is formed on the lower side surface of the silicon oxide film 4, and a metal film 7 for filling a second recessed part being surrounded by the upper side surface of the silicon oxide film 4 at a part where no silicon oxide film 6 is formed, the silicon oxide film 6, and the gate oxide film 5.
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