| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-voltage microwave field effect transistor(FET) and its manufacturing method. SOLUTION: An FET 10 includes a channel layer 18 formed by GaInP that is subjected to compression distortion. Carrier confinement layers 16 and 20 formed by (AlGa)InP that is subjected to pull distortion are formed at upper and lower parts 20 and 16 of the channel layer 18, a carrier is confined to the channel layer 18, and a high breakdown voltage is given.
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