| 摘要 |
PROBLEM TO BE SOLVED: To obtain an efficient vertical thermal treatment furnace, which enables uniform treatment over the surface of a semiconductor substrate, has a simplified structure and will not produce dust, and the installation structure of the furnace. SOLUTION: A boat 3, loaded with a plurality of semiconductor substrates 2, is placed in the core tube 1 of a vertical thermal treatment furnace, and reactive gas 8 is made to flow in the core tube to subject the semiconductor substrates to thermal treatment. A plurality of core tube exhaust outlets 11 and 12 are formed on the core tube of the same intervals between each other. With this constitution, since the reactive gas supplied into the core tube does not flow aslant, the gas is supplied uniformly to the semiconductor substrates (wafers) and the uniformities of the thin films formed on the surfaces of the semiconductor substrate and the resistances of thermal treatment layers formed on the surfaces of the semiconductor substrates can be improved over the surfaces of the semiconductor substrates (wafers).
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