| 摘要 |
PROBLEM TO BE SOLVED: To avoid abnormal etching cleaning of a reaction pipe and to save energy. SOLUTION: Plural semiconductor substrates are installed in a reaction pipe 1, and the semiconductor substrate is heated to a prescribed temperature through the reaction pipe 1. An impurity gas is supplied into the reaction pipe 1, and impurity is made to diffuse into the semiconductor substrate. The reaction pipe 1 is used by positioning opening parts 1a and 1b at both ends in the vertical direction and always installing the inner wall 1c of the reaction pipe 1 in a vertical attitube. Cleaning medical liquid is jetted in a shower form from the upper opening part 1a of the reaction pipe 1 and is supplied into the reaction pipe 1. Cleaning waste liquid is discharged from the lower opening part 1b side of the reaction pipe 1.
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