| 摘要 |
PROBLEM TO BE SOLVED: To obtain a two-dimensional electron transit layer with uniform indium composition and develop a high electron mobility by forming a specific layer, which is vapor phase-deposited using triethylgallium and with boron added, between the substrate and the two-dimensional electron transit layer. SOLUTION: An AlXGa1-XAs (0<X<=1) layer 206, which is vapor phase- deposited using triethylgallium as a gallium source, is arranged between buffer layer 202 formed on the surface of a GaAs substrate 201 and a GaYIn1-YAs (0<Y<=1) channel layer 203. The AlXGa1-XAs (0<X<=1) layer 206 formed on the buffer layers 202 can be formed by utilizing, for example, a (C2H5)3Ga/(CH3)3 Ga/AsH3/hydrogen reaction system which uses arsine as the arsenic source of the group V elements, or, it may also be formed by utilizing a (C2H5)3Ga/(C2 H5)3Al/AsH3/H2 reaction system.
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