| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon nitride film having a thickness of about 5 nm, in such a way that the film can suppress the occurrence of leak currents and has a withstand voltage of >=0.7 V. SOLUTION: In a method for forming silicon nitride film, the partial pressure of TCS gas in a heating vessel 101 is adjusted to >=0.5 of the partial pressure of ammonia (NH3) gas in the vessel 101, by controlling the supplying amount of the TCS gas by means of a flow-rate control section 108 and that of the ammonia gas by means of flow-rate control sections 114 and 115. |
