| 摘要 |
PROBLEM TO BE SOLVED: To restrain or prevent deformation and disconnection failure of a fuse by forming a fuse on an inorganic insulating film on an uppermost wiring layer in the state that the fuse is directly in contact with the insulating film, in a semiconductor device using a wafer process package technique. SOLUTION: A surface protection film 8 is formed on an interlayer insulating film 7, and a bonding pad 2BP as an uppermost wiring layer and a fuse electrode 2F are covered. A fuse 13 is formed on a fuse forming region F, so that the fuse 13 is formed in the state that the lower surface is directly in contact with the interlayer insulating film 7 constituted of an inorganic insulating film. Since mechanical stress applied to the fuse 13 which is caused by heat can be relieved, deforming failure and disconnection of the fuse 13 wherein cutting is unnecessary can be restrained or prevented. As a result, writing reliability of an imperfect memory address and stability of relieving the imperfect memory can be improved, so that yield of a semiconductor device can be improved. |
