发明名称 DEVICE AND METHOD FOR PLASMA TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment device and a plasma treatment method by which uniform plasma treatment can be performed with high efficiency. SOLUTION: A plasma treating device performs plasma treatment on a substrate to be treated between an upper electrode and a lower electrode which are faced oppositely to each other under a short inter-electrode distance under a high discharge pressure condition, many nozzles 9 are radially arranged around the discharge space sandwiched between the upper and lower electrodes with their openings being directed toward the discharge space. The nozzles 9 are connected to a gas supplying device 11 through a first valve VA and a vacuum pump 13 for exhaust through a second valve VB and the flowing direction of gas in the discharge space is changed by switching the blowing-out directions of the gas from the nozzles 9, and the sucking direction of the gas as time elapses by controlling the opening/closing of the valves VA and VB. Therefore, a gas for generating plasma can be supplied uniformly, even under a short inter-electrode distance and high pressure plasma treatment condition.
申请公布号 JP2001085414(A) 申请公布日期 2001.03.30
申请号 JP19990262980 申请日期 1999.09.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAJI HIROSHI;ARITA KIYOSHI;IWAI TETSUHIRO
分类号 H01L21/302;C23F4/00;H01L21/3065;H05H1/46 主分类号 H01L21/302
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