发明名称 |
DEVICE AND METHOD FOR PLASMA TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device and a plasma treatment method by which uniform plasma treatment can be performed with high efficiency. SOLUTION: A plasma treating device performs plasma treatment on a substrate to be treated between an upper electrode and a lower electrode which are faced oppositely to each other under a short inter-electrode distance under a high discharge pressure condition, many nozzles 9 are radially arranged around the discharge space sandwiched between the upper and lower electrodes with their openings being directed toward the discharge space. The nozzles 9 are connected to a gas supplying device 11 through a first valve VA and a vacuum pump 13 for exhaust through a second valve VB and the flowing direction of gas in the discharge space is changed by switching the blowing-out directions of the gas from the nozzles 9, and the sucking direction of the gas as time elapses by controlling the opening/closing of the valves VA and VB. Therefore, a gas for generating plasma can be supplied uniformly, even under a short inter-electrode distance and high pressure plasma treatment condition. |
申请公布号 |
JP2001085414(A) |
申请公布日期 |
2001.03.30 |
申请号 |
JP19990262980 |
申请日期 |
1999.09.17 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HAJI HIROSHI;ARITA KIYOSHI;IWAI TETSUHIRO |
分类号 |
H01L21/302;C23F4/00;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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