MANUFACTURE OF X-RAY MASK

摘要

PROBLEM TO BE SOLVED: To establish a technology for realizing a resolution of 0.1μm or less and a pattern positioning accuracy within about 10 nm. SOLUTION: An X-ray transmitting thin film 12 is formed on a substrate 11 and an X-ray absorbing thin film 14 is formed on the X-ray transmitting thin film, and an alignment mark 17 is formed on the X-ray absorbing thin film 14. A pattern 18 is formed on a resist layer 21 formed on the X-ray absorbing thin film 14 with reference to a recess formed in correspondence to the position of the alignment mark, and the X-ray absorbing thin film 14 is etched based on the pattern 18 to form an X-ray absorbing pattern. Since the X-ray absorbing thin film 14 is etched by using the resist pattern 18, which is formed based on the alignment mark formed on the X-ray absorbing thin film 14, as a protective film, the X-ray absorbing pattern can be formed with high accuracy.