PRODUCTION OF SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-performance photorefractive element or optical switch by providing a process for producing a semiconductor thin film capable of forming p-type GaAs thin films of a carrier concentration sufficient as a contact layer without deteriorating the absorption change characteristic or refractive index change characteristic of the compound semiconductor thin film of an AlGaASs/GaAs system or InGaAs/GaAs system. SOLUTION: This process for producing the semiconductor thin film is for production of the compound semiconductor 7 of the AlGaASs/GaAs system or InGaAs/GaAs system having the p-type GaAs thin film 3 as the contact layer. The substrate temperature at the crystal growth of the part type GaAs thin film 3 is set at a range of 260 to 300 deg.C and doped with at least Be as a p-type impurity, by which the p-type GaAs tin film 3 is formed.