| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor nonvolatile storage element that can be electrically written once by collectively inputting write data to all semiconductor nonvolatile storage elements being arranged in a matrix form with light. SOLUTION: While 0, 5, and 0 V, for example are being applied to a transistor common gate terminal 29 for resetting all memory cells 11 for composing a memory array, its common drain terminal 27, and all address selection lines 23, respectively, a -4 V pulse with a specific width is applied to a memory array P well 39 by a signal from a high-voltage signal line Vpp 45 for writing. As a result, in the memory cells 11 where dark data has been applied with light data, the potential difference between a memory gate and a memory bulk becomes +9 V for writing when a -4 V pulse is applied, since the gate potential of an N-channel memory transistor 15 is maintained close to 5V.</p> |
