| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an alignment method of a mask or an original plate and a substrate which can realize precision nanometer level machining. SOLUTION: This alignment method has a means for holding a mask 21 or an original plate in which a pattern is formed, a means for holding a substrate 31 to be machined and self-aligned part position in specified portions of the mask 21 or the original plate and the substrate 31, and measures the relative positions of the mask 21 or the original plate and the substrate 31 by using one method from among the methods (1), (2) and (3). In the method (1), the relative positions formed on the mask 21 or the original plate and the substrate 31 are detected optically by a light interference method. In the method (2), the change in fluorescence intensity due to the distance between fluorescent material and fluorescence quenching material which are formed on the mask 21 or the original plate and the substrate 31 is detected. The method (3) is AFM or STM for detecting the relative position which are formed on the mask 21 or the original plate and the substrate 31.</p> |
