| 摘要 |
PROBLEM TO BE SOLVED: To improve light emitting efficiency by adding group VII elements on a GaN substrate and setting the thickness of an intermediate layer thereon to be not less than a specified one and setting the content of the group VII elements to be not more than a detection limit. SOLUTION: An n-GaN layer 2 being an intermediate layer whose thickness is not less than 0.2 μm and whose content of group VII elements is set to be a detection limit is formed on a GaN substrate 1 to which the group VII elements are added by a MOCVD method. An InGaN-MQW light-emitting layer 3, a p-AlGaN layer 4, a p-GaN layer 5 and a p+-GaN contact layer 6 are sequentially laminated on the n-GaN layer 2. Then, an n-electrode 7 and a p-electrode 8 are installed on the outermost layers of a laminated body. Thus, a light emitting element whose light emitting characteristics and life characteristics are satisfactory can be obtained. |
