SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To take a countermeasure against power supply noise efficiently by forming a capacitor at a desired position with no restriction of interconnection and to fabricate a capacitor of large capacity with a smaller area even in a finer pattern process technology. SOLUTION: An extra capacitor or a capacitor is fabricated utilizing the capacitance between interconnections (between M11 and M12) or the capacitance between through holes (between B11 and B12) which is increased as a finer patterning is employed in the process technology. For example, an extra capacitance can be formed easily in the vicinity of a part where switching noise is generated and a countermeasure can be taken efficiently against power supply noise. Furthermore, a capacitor of large capacity can be fabricated with a smaller area even in a finer pattern process technology using the same process as other devices without requiring any special process additionally.