| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device which has a stable and highly reliable self-matching contact, while avoiding increase of etch stop, wiring shorting and contact resistance. SOLUTION: Patterns containing gate electrodes 6 are formed on a Si substrate at prescribed intervals. An LTO film 10 is formed so that the patterns are covered. A recessed part 10a, on which the shape of a lower layer is reflected, is formed above the LTO film 10. A SiN film 11 is formed on the LTO film 10, and a part is left in the recessed part 10a. The upper part of the LTO film 10 is etched with the SiN film 11 as a mask. A resist film 12 is formed, a UV curing processing is executed, and the resist film 12 is left in the etched part above the LTO film 10. Resist patterns 13, having openings in the exposure part of the SiN film 11, are formed on the resist film 12. The resist pattern 13 and the resist pattern 12 are etched as the masks, so that a contact hole 14 is formed.
|
