PROCEDE POUR EMPECHER LA DIFFUSION DE BORE DANS UN SILICIUM PAR IMPLANTATION IONIQUE DE CARBONE

摘要

The invention concerns a method for preventing the diffusion of boron present as a dopant in a predetermined region of a semiconductor component into at least an region adjacent to the predetermined region while making the component. The method consists in introducing by ion implantation in the predetermined region a dose of carbon ranging between 0.1 and 1 atom %. For a heterojunction bipolar transistor, said process is carried out after the base is formed.