| 摘要 |
PROBLEM TO BE SOLVED: To obtain an optical semiconductor device module suitable for high- speed communication by canceling generation of a reverse current in an optical semiconductor device the current of which is larger than the dark current, and restraining deterioration of response speed of an output electric signal of the optical semiconductor device. SOLUTION: This optical semiconductor device module is provided with an almost rectangular parallelepiped insulating base substrate 20, on which an optical semiconductor device 4 receiving an optical signal and converting it to an electric signal is mounted, and a first conductor pattern performing input to the semiconductor device 4 and a second conductor pattern performing output from the semiconductor device 4 are formed. A capacitive coupling part 15 is formed on the second conductor pattern. |
