发明名称 |
MICROWAVE PLASMA PROCESSING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To uniformly process a wide area of a subject to be processed with a plasma. SOLUTION: A microwave produced by a microwave power supply 1 is introduced into a microwave radiator 6 through an impedance matching device 4 and a matching transformer 5 and radiated into a plasma processing chamber 7 via a vacuum-sealed quartz window 11. A ferrite core 16 is disposed in the microwave radiator 6 and a magnetic field generating means 17 is provided for applying a DC magnetic field externally to the ferrite core. Thus, field strength at each end of the microwave radiator 6 is controlled to improve the distribution of microwave field strengths over a large width. |
申请公布号 |
JP2001085194(A) |
申请公布日期 |
2001.03.30 |
申请号 |
JP19990264489 |
申请日期 |
1999.09.17 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY CORP |
发明人 |
YOSHIKI HIROYUKI |
分类号 |
H01L21/302;C23C16/511;C23F4/00;H01L21/205;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|