发明名称 MICROWAVE PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To uniformly process a wide area of a subject to be processed with a plasma. SOLUTION: A microwave produced by a microwave power supply 1 is introduced into a microwave radiator 6 through an impedance matching device 4 and a matching transformer 5 and radiated into a plasma processing chamber 7 via a vacuum-sealed quartz window 11. A ferrite core 16 is disposed in the microwave radiator 6 and a magnetic field generating means 17 is provided for applying a DC magnetic field externally to the ferrite core. Thus, field strength at each end of the microwave radiator 6 is controlled to improve the distribution of microwave field strengths over a large width.
申请公布号 JP2001085194(A) 申请公布日期 2001.03.30
申请号 JP19990264489 申请日期 1999.09.17
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 YOSHIKI HIROYUKI
分类号 H01L21/302;C23C16/511;C23F4/00;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/302
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