| 摘要 |
PROBLEM TO BE SOLVED: To obtain an antireflection polymer capable of preventing reflection on a lower film layer on a wafer in an ultrafine pattern forming step utilizing an ArF light source when the polymer is used as an antireflection film in the formation of the ultrafine pattern of a semiconductor device. SOLUTION: The antireflection polymer is represented by formula I and used as an antireflection film in the formation of the ultrafine pattern of a semiconductor device. In the formula, R1 and R2 are each -H, -OH, -CH3, -CH2OH Or-(CH2)nCH3, R3 is a group of formula II or the like, R4 is -H, -OH, -CH3, -OCH3, -(CH2)nCH3 or -(CH2)nOH, (n) is an integer of 1-3, x:y shows a molar ratio of (0.0-1.0):(0.1-1.0), and in the case of x=0, R4 is a group of formula III or the like. Since the polymer contains phenyl groups having high absorbance at 193 nm wavelength, the absorbance of the polymer at 193 nm is maximum and the polymer is used as an antireflection film for ArF. |
