SEMICONDUCTOR DEVCIE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has satisfactory electrical characteristics and which is small-size and has superior heat resisting property. SOLUTION: A semiconductor element 12 with its front and rear faces formed with electrodes is heated preliminarily to gain a specified level of ohmic contact property for the rear face electrode of the element 12. An insulating substrate is prepared which is formed on its front side with a plurality of regularly formed same circuit patterns, and on its rear side with a plurality of regularly formed external electrodes 15 connected to the circuit patterns on the front side via through-holes 14 or via holes. The rear face electrode of the semiconductor element 12 is bonded on an element-mounting section 13a of the circuit patterns formed on the front face of the insulating substrate with a conductive adhesive which is hardened at a low temperature. An inner electrode 13b of the circuit patterns of the insulating substrate is connected to the front face electrode of the semiconductor element with a metal fine wire 16. Then, the entire surface of the insulating substrate formed with the circuit patterns is sealed with resin, and the structure is divided into individual semiconductor devices.