| 摘要 |
PROBLEM TO BE SOLVED: To obtain an apparatus for manufacturing semiconductor, in which the thicknesses of sputtering films deposited on shielding plates are suppressed and the sputtering films do not fall off onto a substrate, even if the films are separated from the shielding plates. SOLUTION: The closer shielding plates 1, 2, and 3 are to cathodes 51, 52 and 53, the large are the diameters of apertures formed in the shielding plates 1, 2 and 3. With this construction, the thicknesses of sputtering films 101, 102 and 103 are reduced uniformly, while the directivities of sputtering particles are maintained. Furthermore, the circumferential parts of the apertures of the shielding plates 1, 2 and 3 are bent toward the cathodes. With this construction, the areas of the shielding plates 1, 2 and 3 on which the films 101, 102 and 103 are deposited are reduced. Moreover, separated films cannot fall off over the bent circumferential parts.
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