| 摘要 |
A process for backside chemical etching and polishing of substrates including the steps of protecting the front surface of the wafer, chemical etching, first dump rinse/spin dry, backside polishing, residue cleaning, second dump rinse/spin dry, and front surface protection removal. The process is generally intended to be used for semiconductor wafers, but it can also be used for processing other types of substrates such as GaAs, GaP, GaAIAs, GaAIP, ceramics, quartz, bonded silicon wafers, dielectric isolated wafers and substrates, etc. |
