| 摘要 |
<p>A process for heat treating a silicon wafer to dissolve B-type agglomerated interstitial defects present therein. The process includes heating the silicon wafer at a temperature for a time sufficient to dissolve B-deffects, the wafer being heated to said temperature at a rate sufficient to prevent B-defects from becoming stabilized such that these defects are rendered incapable of being dissolved.</p> |
