METHOD FOR PRODUCING A MASK LAYER HAVING OPENINGS WITH REDUCED WIDTHS

摘要

The invention relates to a method for producing a mask layer having openings with reduced widths. An organic resist layer (3) is produced over the semiconductor substrate and is lithographically structured, whereby a resist opening (4) is produced in the resist layer (3). A polymer film (5) is deposited on the structured resist layer (3). Said film covers the side walls and the bottom (6) of the resist opening (4). The polymer film (5) is removed from the bottom (6) of the resist opening (4) by means of anisotropic etching.