发明名称 |
Liquid-phase growth method, liquid-phase growth apparatus, and solar cell |
摘要 |
The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a second semiconductor layer on the first semiconductor layer in liquid phase at a higher temperature; a solar cell produced by a method comprising a step of anodizing the surface of the first and second layer side of the semiconductor substrate produced by the liquid-phase growth method; a liquid-phase growth apparatus comprising means for storing a melt, means for changing the temperature of the stored melt, and means for bringing an oxygen-containing substrate into contact with the melt, wherein a substrate is brought into contact with the melt at a temperature so as to suppress the stacking faults contained in the semiconductor layer grown on the surface of the substrate. <IMAGE> <IMAGE> |
申请公布号 |
AU6126200(A) |
申请公布日期 |
2001.03.29 |
申请号 |
AU20000061262 |
申请日期 |
2000.09.22 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KATSUMI NAKAGAWA;SHOJI NISHIDA |
分类号 |
H01L31/04;C30B19/02;C30B19/06;H01L21/20;H01L21/208 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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