发明名称 OPTICAL METHOD FOR THE CHARACTERIZATION OF INTEGRATED CIRCUITS
摘要 <p>Disclosed is a method for characterizing a sample (315) having a structure (310) disposed on or within the sample (315), comprising the steps of applying a first pulse of light to a surface (312) of the sample for creating a propagating strain pulse (316, 314) in the sample (315), applying a second pulse of light to the surface (312) so that the second pulse of light interacts with the propagating strain pulse (316, 314) in the sample (315), sensing from a reflection of the second pulse a change in optical response of the sample (315), and relating a time of occurence of the change in optical response to at least one dimension of the structure (310).</p>
申请公布号 WO2001022028(A1) 申请公布日期 2001.03.29
申请号 US2000023059 申请日期 2000.08.23
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