发明名称 Apparatus for magnetron sputtering comprises targets surrounded by a plasma electrode open to the substrate and peripheral to its sputtering surface
摘要 Apparatus for magnetron sputtering comprises targets (1,2) surrounded by a plasma electrode (9,10) open to the substrate (27) and peripheral to its sputtering surface. A selective potential can be applied to the electrode. A number of gas outlet openings (13) are provided between the targets and the electrode or directly on the electrode, the openings being connected to a gas feed device (21). Preferred Features: At least one part of the plasma electrode protrudes over the sputtering surface of the targets in the direction towards the substrate by an amount that corresponds to a quarter of the distance between the targets and the substrate.
申请公布号 DE19947935(A1) 申请公布日期 2001.03.29
申请号 DE19991047935 申请日期 1999.09.28
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 FRACH, PETER;GOEDICKE, KLAUS;HOLFELD, ANDREAS;GOTTFRIED, CHRISTIAN
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/35
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