发明名称 |
Apparatus for magnetron sputtering comprises targets surrounded by a plasma electrode open to the substrate and peripheral to its sputtering surface |
摘要 |
Apparatus for magnetron sputtering comprises targets (1,2) surrounded by a plasma electrode (9,10) open to the substrate (27) and peripheral to its sputtering surface. A selective potential can be applied to the electrode. A number of gas outlet openings (13) are provided between the targets and the electrode or directly on the electrode, the openings being connected to a gas feed device (21). Preferred Features: At least one part of the plasma electrode protrudes over the sputtering surface of the targets in the direction towards the substrate by an amount that corresponds to a quarter of the distance between the targets and the substrate.
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申请公布号 |
DE19947935(A1) |
申请公布日期 |
2001.03.29 |
申请号 |
DE19991047935 |
申请日期 |
1999.09.28 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
FRACH, PETER;GOEDICKE, KLAUS;HOLFELD, ANDREAS;GOTTFRIED, CHRISTIAN |
分类号 |
C23C14/35;H01J37/34;(IPC1-7):C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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