| 摘要 |
<p>A ferroelectric memory device has a ferroelectric capacitor comprising a ferroelectric thin film and first and second capacitive electrodes which sandwich the ferroelectric thin film therebetween. The ferroelectric memory device is operable in a wide range of allowable power supply voltages such that it can operate at a low power-supply voltage. The ferroelectric thin film is formed such that a coercive voltage thereof is smaller than a reduced voltage applied between the first and second capacitive electrodes and generated by reducing an external power-supply voltage supplied in a predetermined voltage range. <IMAGE> <IMAGE></p> |
