METHOD FOR MANUFACTURING DRAM DEVICE

摘要

PURPOSE: A fabrication method of DRAM device is provided to prevent a come off effect of a bit line and a rapid increase of a P+ contact resistance by forming a metal bit line using a TiN layer in spite of a tungsten. CONSTITUTION: A first interlayer dielectric(110) is formed on a substrate(100) including a first IC(Integrated Circuit) having at least one of an n - diffusion layer, and a second integrated circuit having at least one of the n - diffusion layer and at least one of a p + diffusion layer. A first conductive plug(112) is formed in order to arrive in the n - diffusion layer of the first IC through the first interlayer dielectric. A second interlayer dielectric(114) is formed simultaneously to cover the first plug and the first interlayer dielectric. A contact holes are formed to arrive in the conductive plug through the second interlayer dielectric and in the n - and the p + diffusion layers of the second IC through the first and the second interlayer dielectrics. A conformal first metal film(118) is formed to cover the contact hole and the second interlayer dielectric. A silicide layer(119) serving as an ohmic contact layer is formed on a contact region between the first metal film and the n type and p type diffusion layers, and a contact region between the first metal film and the first conductive contact plug. A second metal films(120,122) are formed the contact holes and the first metal film. A bit line for connecting to the n type diffusion layer into the first IC and the second conductive plug for connecting to the n type and the p type diffusion layers of the second IC is formed by patterning the second metal film.