发明名称 Methods of forming photoresist and apparatus for forming photoresist
摘要 Methods of forming layers of photoresist and apparatus for forming photoresist are described. In one embodiment, a wafer is provided and photoresist is applied thereover. The wafer is rotated while the photoresist is baked. In another embodiment, a wafer having photoresist formed thereover is positioned at a baking station. After positioning, the wafer is moved while exposed to baking conditions at the station. In another embodiment, a wafer having photoresist applied thereover is positioned on a rotatable hot plate at a photoresist baking station. The rotatable hot plate is rotated during at least some of the time the wafer is baked at the station. In another embodiment, photoresist is applied over a wafer surface and into a predefined non-uniform thickness over the surface. The non-uniform thickness is modified over the surface into a more uniform thickness while the photoresist is baked.
申请公布号 US6207357(B1) 申请公布日期 2001.03.27
申请号 US19990299221 申请日期 1999.04.23
申请人 MICRON TECHNOLOGY, INC. 发明人 KRAUTH ANTHONY C.
分类号 G03F7/16;(IPC1-7):G03C5/00 主分类号 G03F7/16
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