Method for fabricating BiCDMOS device and BiCDMOS device fabricated by the same

摘要

A method for fabricating a BiCDMOS device where bipolar, CMOS and DMOS transistors are formed on a single wafer is provided. A semiconductor region of a second conductivity type is formed on a semiconductor substrate of a first conductivity type. Well regions of first and second conductivity types are formed within the semiconductor region. Then, an oxidation passivation layer pattern defining a region where a pad oxide layer and a field oxide layer are to be formed is formed on a surface of the substrate where the well regions have been formed. Impurity ions of the first conductivity type are implanted into the entire surface of a region where the field oxide layer is to be formed, using the oxidation passivation layer pattern as an ion implantation mask. An ion implantation mask pattern defining a field region of the second conductivity type is formed on the substrate where the oxidation passivation layer has been formed. Impurity ions of the second conductivity type are implanted, using the ion implantation mask pattern. Then, the ion implantation mask pattern is removed. The field oxide layer is formed by annealing, using the oxidation passivation layer pattern, and simultaneously field regions of the first and the second conductivity types are formed.