METHOD AND APPARATUS FOR MONOLITHIC OPTOELECTRONIC INTEGRATED CIRCUIT USING SELECTIVE EPITAXY

摘要

A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In x Ga1-x As selectively epitaxially grown between a substrate of Si and an absorption layer of In x Ga1-x As, the areas of said layers being less than 500 .mu.m2 and wherein a readout circuit on said substrate is coupled to said diode.