发明名称 Semiconductor memory device having a plurality of bank sections distributed in a plurality of divided memory cell arrays
摘要 A semiconductor memory device has a plurality of memory cell arrays with a plurality of bank sections. Bank sections identified by different sequence numbers are operated independently of each other. A plurality of data bus lines transfer data in order to write into a desired bank section in each of the memory cell arrays and to read data from the desired bank section in each of the memory cell arrays. The desired bank sections with a same sequence number in each of memory cell arrays are selected simultaneously by a vertical and horizontal bank selection signal.
申请公布号 US6209056(B1) 申请公布日期 2001.03.27
申请号 US19970885035 申请日期 1997.06.30
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 SUH JUNG WON
分类号 G11C11/41;G11C5/02;G11C5/06;G11C7/10;G11C8/02;G11C11/401;H01L21/8242;H01L27/108;(IPC1-7):G06F12/06;G11C11/34 主分类号 G11C11/41
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