Seed layer structure for spin valve sensor

摘要

A bilayer seed layer structure is employed between a first read gap layer and a spin valve sensor for increasing the magnetoresistive coefficient (dr/R). In a bottom spin valve sensor the bilayer seed layer structure is located between the first read gap layer and a pinning layer and in a top spin valve sensor the bilayer seed layer structure is located between the first read gap layer and the free layer. The pinning layer is preferably iridium manganese (IrMn). The bilayer seed layer structure includes a first seed layer which is a metallic oxide and a second seed layer that is a nonmagnetic metal. A preferred embodiment is a first seed layer of nickel manganese oxide (NiMnO) and a second seed layer of copper (Cu).