| 摘要 |
In a method of manufacturing a semiconductor device, a first sacrifice oxide film is formed on a substrate. Next, a second sacrifice oxide film is formed on the substrate by etching the first sacrifice oxide film to a predetermined depth in a first etching process. Herein, the second sacrifice oxide film is thinner than the first sacrifice oxide film. Subsequently, the second sacrifice oxide film is completely removed from a surface of the substrate in a second etching process so as to expose the surface of the substrate. Finally, an oxide film is formed on the exposed surface of the substrate.
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