Spin valve with improved capping layer structure

摘要

A capping structure is provided for a spin valve sensor which improves its magnetoresistive coefficient (dr/R). In one embodiment the capping structure includes a first layer of cobalt iron (CoFe) and a second layer of tantalum (Ta). In a second embodiment the capping structure includes a first layer of cobalt iron (CoFe) or cobalt (Co), a second layer of copper (Cu) and a third layer of tantalum (Ta).