发明名称 |
Method of making semiconductor device having double spacer |
摘要 |
A semiconductor device having a double spacer and a method of manufacturing the device are provided. The semiconductor device includes a first spacer formed on the sidewall of a gate electrode and a second spacer formed on the slanted sidewall of the first spacer. A first impurity region is formed doped with a first conductivity type impurity at a first concentration and formed at a small junction depth in the substrate to self-align at the edge of the gate electrode. A second impurity region doped with second conductivity type impurity at a second concentration is formed at a large junction depth in the substrate to self-align at the edge of the first spacer. A third impurity region doped with the first conductivity type impurity at a third concentration is formed at a medium junction depth in the second impurity region to self-align at the edge of the second spacer.
|
申请公布号 |
US6207519(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19980158875 |
申请日期 |
1998.09.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM HYUN-SIK;SHIN HEON-JONG |
分类号 |
H01L29/78;H01L21/22;H01L21/336;H01L27/088;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|